hexfet ? power mosfet irl3803 pd - 91301d l logic-level gate drive l advanced process technology l ultra low on-resistance l dynamic dv/dt rating l 175c operating temperature l fast switching l fully avalanche rated v dss = 30v r ds(on) = 0.006 w i d = 140a ? s d g t o -22 0 ab 1/5/04 parameter min. typ. max. units r q jc junction-to-case CCCC CCCC 0.75 r q cs case-to-sink, flat, greased surface CCCC 0.50 CCCC c/w r q ja junction-to-ambient CCCC CCCC 62 thermal resistance description parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 140 ? i d @ t c = 100c continuous drain current, v gs @ 10v 98 ? a i dm pulsed drain current ? 470 p d @t c = 25cpower dissipation200w linear derating factor 1.3 w/c v gs gate-to-source voltage 16 v e as single pulse avalanche energy ? 610 mj i ar avalanche current ? 71 a e ar repetitive avalanche energy ? 20 mj dv/dt peak diode recovery dv/dt ? 5.0 v/ns t j operating junction and -55 to + 175 t stg storage temperature range c soldering temperature, for 10 seconds 300 (1.6mm from case) mounting torque, 6-32 or m3 screw. 10 lbf?in (1.1n?m) absolute maximum ratings fifth generation hexfets from international rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. the to-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. the low thermal resistance and low package cost of the to-220 contribute to its wide acceptance throughout the industry.
irl3803 parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 30 ??? ??? v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient ??? 0.052 ??? v/c reference to 25c, i d = 1ma ??? ??? 0.006 v gs = 10v, i d = 71a ? ??? ??? 0.009 v gs = 4.5v, i d = 59a ? v gs(th) gate threshold voltage 1.0 ??? ??? v v ds = v gs , i d = 250a g fs forward transconductance 55 ??? ??? s v ds = 25v, i d = 71a ??? ??? 25 v ds = 30v, v gs = 0v ??? ??? 250 v ds = 24v, v gs = 0v, t j = 150c gate-to-source forward leakage ??? ??? 100 v gs = 16v gate-to-source reverse leakage ??? ??? -100 v gs = -16v q g total gate charge ??? ??? 140 i d = 71a q gs gate-to-source charge ??? ??? 41 nc v ds = 24v q gd gate-to-drain ("miller") charge ??? ??? 78 v gs = 4.5v, see fig. 6 and 13 ? t d(on) turn-on delay time ??? 14 ??? v dd = 15v t r rise time ??? 230 ??? i d = 71a t d(off) turn-off delay time ??? 29 ??? r g = 1.3 w, v gs = 4.5v t f fall time ??? 35 ??? r d = 0.20 w, see fig. 10 ? between lead, 6mm (0.25in.) from package and center of die contact c iss input capacitance ??? 5000 ??? v gs = 0v c oss output capacitance ??? 1800 ??? pf v ds = 25v c rss reverse transfer capacitance ??? 880 ??? ? = 1.0mhz, see fig. 5 electrical characteristics @ t j = 25c (unless otherwise specified) na s d g i dss drain-to-source leakage current r ds(on) static drain-to-source on-resistance i gss l d internal drain inductance ??? 4.5 ??? l s internal source inductance ??? 7.5 ??? ns a nh w parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c, i s = 71a, v gs = 0v ? t rr reverse recovery time ??? 120 180 ns t j = 25c, i f = 71a q rr reverse recoverycharge ??? 450 680 nc di/dt = 100a/s ? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) a ??? ??? 470 ??? ??? 140 ? s d g source-drain ratings and characteristics ? v dd = 15v, starting t j = 25c, l = 180h r g = 25 w , i as = 71a. (see figure 12) ? caculated continuous current based on maximum allowable junction temperature;for recommended current-handling of the package refer to design tip # 93-4 ? repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) ? pulse width 300s; duty cycle 2%. ? i sd 71a, di/dt 130a/s, v dd v (br)dss , t j 175c notes:
irl3803 fig 1. typical output characteristics, t j = 25 o c fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics, t j = 175 o c 0.01 0.1 1 10 100 1000 10000 0.1 1 10 100 i , drain-to-source current (a) d v , drain-to-source volta g e ( v ) ds a 2.0v 20 s pulse w idth t = 25c j vgs top 15v 12v 10v 8.0v 6.0v 4.0v 3.0v bottom 2.0v 0.01 0.1 1 10 100 1000 10000 0.1 1 10 100 i , drain-to-source current (a) d v , drain-to-source volta g e ( v ) ds a 2.0v vgs top 15v 12v 10v 8.0v 6.0v 4.0v 3.0v bottom 2.0v 20 s pulse w idth t = 175c j 0.01 0.1 1 10 100 1000 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 t = 25c gs v , gate-to-source volta g e ( v ) d i , drain-to-source c urrent (a) t = 175c a v = 25v 20s pulse w idth ds j j 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 j t , junction temperature (c) r , drain-to-source o n resistance ds(on) (normalized) v = 10v gs a i = 120a d
irl3803 fig 7. typical source-drain diode forward voltage fig 5. typical capacitance vs. drain-to-source voltage fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage 0 3 6 9 12 15 0 40 80 120 160 200 q , total g ate char g e ( nc ) g v , g ate-to-s ource v oltage (v ) gs a for test circuit see figure 13 v = 24v v = 15v i = 71a ds ds d 10 100 1000 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 t = 25c j v = 0v gs v , source-to-drain volta g e ( v ) i , reverse drain current (a) sd sd a t = 175c j 10 100 1000 1 10 100 v , drain-to-source volta g e ( v ) ds i , drain current (a) ope ration in this area limite d by r d ds(on) 10s 100s 1ms 10ms a t = 25c t = 175c sin g le p u ls e c j 0 2000 4000 6000 8000 10000 1 10 100 c, capacitance (pf) ds v , drain-to-source volta g e ( v ) a v = 0v , f = 1mhz c = c + c , c shorte d c = c c = c + c gs iss g s g d ds rss g d oss ds g d c iss c oss c rss
irl3803 fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-case v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 4.5v + - v dd 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectan g ular pulse duration ( sec ) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 175 0 20 40 60 80 100 120 140 t , case temperature ( c) i , drain current (a) c d limited by package
irl3803 fig 12a. unclamped inductive test circuit fig 12b. unclamped inductive waveforms v ds l d.u.t. v dd i as t p 0.01 w r g + - t p v ds i as v dd v (br)dss 4.5 v q g q gs q gd v g charge fig 13a. basic gate charge waveform d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - 0 300 600 900 1200 1500 25 50 75 100 125 150 175 j e , single pulse avalanche energy (mj) as a startin g t , junction temperature ( c ) v = 15v i top 29a 50a bo tto m 71a dd d fig 12c. maximum avalanche energy vs. drain current fig 13b. gate charge test circuit 4.5 v
irl3803 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfets * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit ? ? ? r g v dd dv/dt controlled by r g driver same type as d.u.t. i sd controlled by duty factor "d" d.u.t. - device under test d.u.t circuit layout considerations low stray inductance ground plane low leakage inductance current transformer ? *
irl3803 world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 7321 victoria park ave., suite 201, markham, ontario l3r 2z8, tel: (905) 475 1897 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 3-30-4 nishi-ikeburo 3-chome, toshima-ki, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 0316 tel: 65 221 8371 http://www.irf.com/data and specifications subject to change without notice.1/04 lead assignments 1 - g a t e 2 - d r a in 3 - s o u r c e 4 - d r a in - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) m in 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.3 6 (.014 ) m b a m 4 1 2 3 notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 3 o utline conforms to jedec outline to-220ab. 2 c o n tr o llin g d im e n s io n : in c h 4 h e a t s in k & le a d m e a s u r e m e n t s d o n ot include burrs. to-220ab part marking information to-220ab package outline dimensions are shown in millimeters (inches) example: this is an irf1010 lot code 1789 as s embled on ww 19, 1997 in the assembly line "c" international rect ifier logo assembly lot code part number dat e code ye ar 7 = 1997 week 19 line c
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